all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! data sheet 1 of 8 rev. 02.2, 2015-06-05 PXAC182002FC thermally-enhanced high power rf ldmos fet 180 w, 28 v, 1805 C 1880 mhz description the PXAC182002FC is a 180-watt ldmos fet with an asymmetri - cal design intended for use in multi-standard cellular power amplifer applications in the 1805 to 1880 mhz frequency band. features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless fanges. manufactured with infneon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PXAC182002FC package h-37248-4 rf characteristics single-carrier wcdma specifications (tested in infineon doherty test fixture) v dd = 28 v, i dq = 400 ma, v gspeak = 1.1 v, p out = 28.2 w avg, ? = 1880 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 15.5 16.5 db drain effciency h d 48.5 51 % adjancent channel power ratio acpr C30 C26 dbc features ? broadband internal input and output matching ? asymmetrical doherty design - main: 70 w typ (p 1db ) - peak: 110 w typ (p 1db ) ? typical pulsed cw performance, 1880 mhz, 28 v, combined outputs - output power at p 3db = 194 w - effciency = 64% - gain = 14 db ? capable of handling 10:1 vswr @28 v, 110 w (cw) output power ? integrated esd protection ? low thermal resistance ? pb-free and rohs compliant -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 25 30 35 40 45 50 55 efficiency (%) peak/average ratio, gain (db) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 400 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c182002fc_g1
data sheet 2 of 8 rev. 02.2, 2015-06-05 PXAC182002FC dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v( br)dss 65 v drain leakage current v ds = 28 v, v gs = 0 v i dss 0.1 a v ds = 63 v, v gs = 0 v i dss 1.0 a on-state resistance (main) v gs = 10 v, v ds = 0.1 v r ds(on) 0.18 w (peak) v gs = 10 v, v ds = 0.1 v r ds(on) 0.135 w operating gate voltage (main) v ds = 28 v, i dq = 400 ma v gs 2.55 2.65 2.75 v (peak) v ds = 28 v, i dq = 0 a v gs 0.9 1.2 1.3 v gate leakage current v gs = 10 v, v ds = 0 v i gss 0.1 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs C6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg C65 to +150 c thermal resistance (main, t case = 70c, 28 w cw) r qjc 1.088 c/w (peak, t case = 70c, 100 w cw) r qjc 0.587 c/w ordering information type and version order code package description shipping PXAC182002FC v1 PXAC182002FCv1xwsa1 h-37248-4, earless fange tray PXAC182002FC v1 r250 PXAC182002FCv1r250xtma1 h-37248-4, earless fange tape & reel, 250 pcs
PXAC182002FC data sheet 3 of 8 rev. 02.2, 2015-06-05 typical performance (data taken in a production test fxture) 0 10 20 30 40 50 60 -70 -60 -50 -40 -30 -20 -10 27 32 37 42 47 52 efficiency(%) acp up & low (dbc) average output power (dbm) single - carrier wcdma drive - up v dd = 28 v, i dq = 400 ma, ? = 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz efficiency acp up acp low c182002fc_g2 -50 -45 -40 -35 -30 -25 -20 27 32 37 42 47 52 acp up & low (dbc) average output power (dbm) single - carrier wcdma 3gpp drive - up v dd = 28 v, i dq = 400 ma, ? = 1805 - 1880 mhz, 3gpp wcdma signal, par = 10 db, bw = 3.84 mhz 1880 acpl 1880 acpu 1842.5 acpl 1842.5 acpu 1805 acpl 1805 acpu c182002fc_g3 5 15 25 35 45 55 65 0 4 8 12 16 20 24 29 33 37 41 45 49 53 57 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 400ma 1842.5 gain 1805 gain 1880 gain 1880 eff 1842.5 eff 1805 eff efficiency gain c182002fc_g4 5 20 35 50 65 5 10 15 20 25 27 35 43 51 59 efficiency (%) gain (db) output power (dbm) cw performance at various v dd i dq = 400 ma, ? = 1880 mhz 24v gain 28v gain 32v gain 24v eff 28v eff 32v eff gain efficiency c182002fc_g5
data sheet 4 of 8 rev. 02.2, 2015-06-05 PXAC182002FC typical performance (cont.) load pull performance main side load pull performance C pulsed cw signal: 160 s, 10% duty cycle, 28 v, i dq = 405 ma p 1db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1810 3.94 C j10.15 2.92 C j5.27 19.2 49.4 86 54.0 6.49 C j2.19 21.9 47.2 52 66.6 1840 5.13 C j10.93 2.93 C j4.16 19.5 49.3 85 57.6 5.82 C j2.44 21.7 47.5 56 66.3 1880 5.90 C j12.44 2.73 C j5.17 19.2 49.5 89 55.2 4.53 C j2.29 21.5 47.7 59 67.9 peak side load pull performance C pulsed cw signal: 160 s, 10% duty cycle, 28 v, i dq = 685 ma p 1db max output power max drain efficiency freq [mhz] zs [ w] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] zl [ w ] gain [db] p out [dbm] p out [w] h d [%] 1810 3.71 C j9.13 4.64 C j5.44 20.5 50.9 123 55.5 3.52 C j2.84 22.7 49.7 94 66.2 1840 4.76 C j8.65 4.66 C j5.68 20.6 50.7 117 54.5 3.39 C j3.01 23.2 49.2 84 64.1 1880 6.40 C j9.13 4.63 C j5.74 20.8 50.7 116 54.3 2.83 C j3.50 23.1 49.2 83 64.3 -30 -25 -20 -15 -10 10 12 14 16 18 1700 1750 1800 1850 1900 1950 2000 input return loss (db) gain (db) frequency (mhz) cw performance small signal gain & input return loss v dd = 28 v, i dq = 400 ma irl gain c182002fc_g6
PXAC182002FC data sheet 5 of 8 rev. 02.2, 2015-06-05 reference circuit , 1805 C 1880 mhz reference circuit assembly diagram (not to scale) pxac 182002fc_in _01 c 102 rf_in rf_out v dd v gs v gspk c 1 8 2 0 0 2 f c _ c d _ 0 3 - 2 4 - 2 0 1 5 c101 c103 c105 c 104 c106 c108 c107 c204 c206 c 208 c207 c202 c 201 c203 ro4350 , .020 (61) c 210 c211 ro4350 , .020 (60) s 1 r 102 r 101 r 103 r 104 r 106 r 105 PXAC182002FC _out _01 c216 c213 c209 c218 c215 c214 v dd c 217 c212 c 219 c205
data sheet 6 of 8 rev. 02.2, 2015-06-05 PXAC182002FC reference circuit (cont.) reference circuit assembly dut PXAC182002FC v1 test fixture part no. lta/PXAC182002FC v1 pcb rogers 4350, 0.508 mm [0.020] thick, 2 oz. copper, r = 3.66, ? = 1805 C 1880 mhz find gerber files for this test fixture on the infineon web site at http://www.infineon.com/rfpower components information component description manufacturer p/n input c101 capacitor, 1.2 pf atc atc600f1r2cw250t c102 capacitor, 0.5 pf atc atc600f0r5cw250t c103, c104, c105, c106 capacitor, 18 pf atc atc600f180jw250t c107, c108 capacitor, 10 f taiyo yuden umk325c7106mm-t r101 resistor, 50 w richardson c8a50z4a r102 resistor, 18 ohms panasonic electronic components erj-8geyj180v r103, r104 resistor, 301 w venkel cr0603-16w-3010ft r105, r106 resistor, 10 w panasonic electronic components erj-3geyj100v s1 hybrid coupler anaren x3c19p1-03s output c201, c207, c215, c218, c219 capacitor, 18 pf atc atc600f180jw250t c202 capacitor, 0.8 pf atc atc600f0r8aw250t c203 capacitor, 5.1 pf atc atc600f5r1aw250t c204 capacitor, 1.6 pf atc atc600f1r6aw250t c205, c217 capacitor, 220 f cornell dubilier electronics sk221m050st c206, c208, c209, c211, c213, c214, c216 capacitor, 10 f taiyo yuden umk325c7106mm-t c210 capacitor, 0.5 pf atc atc600f0r5aw250t c212 capacitor, 1.6 pf atc atc600f1r6aw250t pinout diagram (top view) pin description d1 drain device 1 (main) d2 drain device 2 (peak) g1 gate device 1 (main) g2 gate device 2 (peak) s source (flange) lead connections for PXAC182002FC h - 37248 - 4 _pd _10 - 10 - 2012 s d1 d2 g1 g2 main peak
PXAC182002FC data sheet 7 of 8 rev. 02.2, 2015-06-05 package outline specifcations package h-37248-4 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless specifed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. c l l c c l 2x 12 . 70 [. 500 ] 19. 810 . 20 [. 780 0 . 008 ] 4x 3.81 [. 150 ] lid 9. 40 [. 370 ] flange 9. 78 [. 385 ] 2 x 4.830 . 51 [. 190 0 . 020 ] 3. 76 0.25 [. 148 0.010 ] sph 1. 57 [. 062 ] 4x r0. 76 +0 . 13 - 0. 38 [ r . 030 +0.005 - 0 . 015 ] d1 d 2 g 1 g2 1. 02 [. 040 ] 20 . 57 [. 810 ] s 2x 45 x 2.72 [45 x . 107 ] (8.89 [. 350 ]) ( 5. 08 [. 200 ]) 19. 430.51 [. 765 0.020 ] h - 37248 - 4 _po _02 _01 - 09 - 2013 0 . 0381 [. 0015] - a -
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